PART |
Description |
Maker |
FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
JM38510 AD532J AD532JCHIP AD532JD AD532JH AD532K A |
Internally Trimmed Integrated Circuit Multiplier 16-bit 40MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 IC-MONOLITHIC MULTIPIER Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, CDIP14 Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, MBCY10
|
AD[Analog Devices] Analog Devices, Inc.
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET 12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V5964 C445964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
FLM1314-18F |
X,Ku-Band Internally Matched FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FLM1011-8F |
X, Ku-Band Internally Matched FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FLM0910-8F |
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|